MA3864
AC CHARACTERISTICS
Conditions of Test for Table 5:
1. Input pulse = V
SS
to 4.5V.
2. Times measurement reference level = 1.5V.
3. Input Rise and Fall times
≤5ns.
4. Output load 1TTL gate and CL = 60pF.
5. Transition is measured at ±500mV from steady state (T
ELQX
, T
EHQZ
, T
GHQZ
).
6. These parameters are sampled and not 100% tested (T
ELQX
, T
EHQZ
, T
GHQZ
).
Characteristics apply to pre-radiation at T
A
= -55°C to +125°C with V
DD
= 5V±10% and to post 100k Rad(Si) total dose radiation
at T
A
= 25°C with V
DD
= 5V ±10%. GROUP A SUBGROUPS 9, 10, 11.
Symbol
T
AVAX
T
AVQV
*T
ELQV
T
GLQV
T
AXQX
*T
ELQX
*T
EHQZ
T
GHQZ
T
ELEH
Parameter
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Enable to Output Valid
Output Hold Time for Address Access
Chip Select Low to Outputs Active
Chip Select High to Outputs Hi-Z
Output Enable High to Output Hi-Z
Chip Select Pulse Width
Min
60
-
-
-
15
-
-
-
60
Max
-
60
60
15
-
30
30
10
-
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
*These functions refer to the action of the internal chip select,
E.
The timings given are relative to
the last of the pins; E1, E2, E3 and E4 to change which causes the specified transitions of
E.
Figure 5: Read Cycle AC Electrical Characteristics
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Conditions
V
l
= 0V
V
I/O
= 0V
Min.
-
-
Typ.
3
5
Max.
5
7
Units
pF
pF
Note: T
A
= 25°C and f = 1MHz. Data obtained by characterisation or analysis; not routinely measured.
Figure 6: Capacitance
3
ZARLINK [ ZARLINK SEMICONDUCTOR INC ]
