Le75183
6.0
6.1
Data Sheet
Electrical Characteristics
Summary of Assumptions
Unless otherwise noted, the test conditions are defined by the Le75183 device application circuit shown in
Figure 8
on page 23
with:
V
BAT
=
−48
V, V
DD
= 5.0 V.
6.2
Supply Currents and Power Dissipation
I
DD
mA
Min.
Typ.
0.760
0.850
0.860
Max.
1.1
2.1
1.3
Min.
—
—
—
I
BAT
µA
Typ.
4
4
4
Max.
10
10
10
LCAS Device Power
mW
Min.
—
—
—
Typ.
3.8
4.4
4.5
Max.
6
11
7
Operational
State
All OFF
Power Ringing
or Access
Idle/Talk
Condition
VDD=5V, VBAT=-48V
VDD=5V, VBAT=-48V
VDD=5V, VBAT=-48V
—
—
—
7.0
7.1
Specifications
Device Specifications
Parameter
Test Condition
Measure
Min.
Typ.
Max.
Unit
Off-state Leakage Current:
+25°C
+85°C
–40°C
ON-resistance (SW1, SW2):
+25 °C
+85 °C
–40 °C
Isolation:
+25 °C
+85 °C
–40 °C
dV/dt Sensitivity
*
Vswitch (differential) = –320 V to Gnd
Vswitch (differential) = –60 V to +260 V
Vswitch (differential) = –330 V to Gnd
Vswitch (differential) = –60 V to +270 V
Vswitch (differential) = –310 V to Gnd
Vswitch (differential) = –60 V to +250 V
I
SWITCH
I
SWITCH
I
SWITCH
—
—
—
—
—
—
1
1
1
µA
I
SWITCH
(on) = ±5 mA, ±10 mA
I
SWITCH
(on) = ±5 mA, ±10 mA
I
SWITCH
(on) = ±5 mA, ±10 mA
∆
VON
∆
VON
∆
VON
Iswitch
Iswitch
Iswitch
—
—
—
—
—
—
—
—
49
—
37
—
—
—
200
—
77
—
1
1
1
—
Ω
Vswitch (both poles) = ±320 V, Logic inputs = Gnd
Vswitch (both poles) = ±330 V, Logic inputs = Gnd
Vswitch (both poles) = ±310 V, Logic inputs = Gnd
—
µA
V/µs
*Applied voltage is 100 Vp-p square wave at 100 Hz. Not tested in production.
Table 1 - Test-In Switches, 1 and 2
10
Zarlink Semiconductor Inc.
ZARLINK [ ZARLINK SEMICONDUCTOR INC ]
