Le75183
Data Sheet
6.0 Electrical Characteristics
6.1 Summary of Assumptions
Unless otherwise noted, the test conditions are defined by the Le75183 device application circuit shown in Figure 8
on page 23 with:
V
= −48 V, V = 5.0 V.
DD
BAT
6.2 Supply Currents and Power Dissipation
LCAS Device Power
mW
IDD mA
I
BAT µA
Operational
State
Condition
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
All OFF
VDD=5V, VBAT=-48V
VDD=5V, VBAT=-48V
—
—
0.760
0.850
1.1
2.1
—
—
4
4
10
10
—
—
3.8
4.4
6
Power Ringing
or Access
11
Idle/Talk
VDD=5V, VBAT=-48V
—
0.860
1.3
—
4
10
—
4.5
7
7.0 Specifications
7.1 Device Specifications
Parameter
Test Condition
Measure
Min.
Typ. Max. Unit
Off-state Leakage Current:
ISWITCH
—
—
1
Vswitch (differential) = –320 V to Gnd
Vswitch (differential) = –60 V to +260 V
+25°C
Vswitch (differential) = –330 V to Gnd
Vswitch (differential) = –60 V to +270 V
ISWITCH
ISWITCH
—
—
—
—
1
1
+85°C
–40°C
µA
Vswitch (differential) = –310 V to Gnd
Vswitch (differential) = –60 V to +250 V
ON-resistance (SW1, SW2):
+25 °C
+85 °C
–40 °C
ISWITCH (on) = ±5 mA, ±10 mA
ISWITCH (on) = ±5 mA, ±10 mA
ISWITCH (on) = ±5 mA, ±10 mA
∆ VON
∆ VON
∆ VON
—
—
—
49
—
37
—
77
—
Ω
Isolation:
+25 °C
+85 °C
–40 °C
—
—
—
—
—
—
1
1
1
Vswitch (both poles) = ±320 V, Logic inputs = Gnd
Vswitch (both poles) = ±330 V, Logic inputs = Gnd
Vswitch (both poles) = ±310 V, Logic inputs = Gnd
Iswitch
Iswitch
Iswitch
µA
dV/dt Sensitivity*
—
—
—
200
—
V/µs
*Applied voltage is 100 Vp-p square wave at 100 Hz. Not tested in production.
Table 1 - Test-In Switches, 1 and 2
10
Zarlink Semiconductor Inc.
ZARLINK [ ZARLINK SEMICONDUCTOR INC ]
