ES1AB THRU ES1KB
■
Thermal Characteristics
（T
a
=25℃ Unless otherwise specified）
PARAMETER
SYMBOL
RθJ-A
Thermal resistance
RθJ-L
℃/W
20
1)
UNIT
ES1AB
ES1BB
ES1CB
ES1DB
ES1FB
85
1)
ES1GB
ES1HB
ES1JB
ES1KB
Note:
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
■
Characteristics (Typical)
FIG1
：
Io-TL Curve
1.2
30
FIG2
：
Surge Forward Current Capability
Average Forward Output Current(A)
1.0
Peak Forward Surge Current(A)
25
8.3ms Single Half Sine Wave
20
0.8
0.6
15
0.4
10
0.2
Resistive or Inductive Load
P.C.B. Mounted on 0.2"×0.2"
(5.0mm×5.0mm)Copper Pad Areas
0
80
90
100
110
120
130
140
150
5
0
1
Lead Temperature(
℃
)
Number of Cycles
10
100
FIG3: Forward Voltage
6
4
FIG4:Typical Reverse Characteristics
1000
Instantaneous Forward Current(A)
2
1
0.5
ES1FB~
ES1GB
Instantaneous Reverse Current(uA)
ES1AB~ES1DB
100
ES1HB-ES1JB
ES1KB
Tj=125
℃
10
0.1
0.05
1
Tj=25
℃
0.02
0.01
0.4
0.8
1.2
1.6 1.8
Ta=25
℃
0.1
Instantaneous Forward Voltage(V)
2.0
2.4
0
Percent of Rated Peak Reverse Voltage(%)
20
40
60
80
100
2/5
S-S784
Rev. 2.2,06-Jun-16
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
YANGJIE [ YANGZHOU YANGJIE ELECTRONIC CO., LTD ]
