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ES1DBF3 参数 Datasheet PDF下载

ES1DBF3图片预览
型号: ES1DBF3
PDF下载: 下载PDF文件 查看货源
内容描述: [Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-214AA, SMB, 2 PIN]
分类和应用: 光电二极管
文件页数/大小: 5 页 / 443 K
品牌: YANGJIE [ YANGZHOU YANGJIE ELECTRONIC CO., LTD ]
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ES1AB THRU ES1KB
Surface Mount Super Fast Recovery Rectifier
Features
RoHS
COMPLIANT
● Low profile package
● Ideal for automated placement
● Glass passivated chip junction
● High forward surge capability
● Super Fast reverse recovery time
● Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °
C
Typical Applications
For use in high frequency rectification of power
supplies, inverters, converters, and freewheeling diodes for
consumer and telecommunication.
Mechanical Data
Package:
DO-214AA (SMB
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant, halogen-free
Terminals:
Tin plated leads, solderable per
J-STD-002 and JESD22-B102
Polarity:
Cathode line denotes the cathode end
Maximum Ratings
(Ta=25℃ Unless otherwise specified
PARAMETER
Device marking code
Repetitive peak reverse voltage
Average rectified output current
@60Hz sine wave, resistance load,
TL (Fig.1)
Surge(non-repetitive)forward current
@60Hz half-sine wave,1 cycle, Ta=25℃
Storage temperature
Junction temperature
VRRM
V
SYMBOL
UNIT
ES1AB ES1BB ES1CB ES1DB ES1FB ES1GB ES1HB ES1JB ES1KB
ES1AB ES1BB ES1CB ES1DB ES1FB ES1GB ES1HB ES1JB ES1KB
50
100
150
200
300
400
500
600
800
IO
A
1.0
IFSM
Tstg
Tj
A
30
-55~+150
-55~+150
■Electrical
Characteristics
(T
a
=25℃ Unless otherwise specified)
PARAMETER
Maximum instantaneous
forward voltage drop per diode
Maximum reverse recovery time
SYMBOL UNIT
TEST
ES1AB ES1BB ES1CB ES1DB ES1FB ES1GB ES1HB ES1JB ES1KB
CONDITIONS
IFM=1.0A
I
F
=0.5A,I
R
=1.0A,
I
rr
=0.25A
Ta =25℃
IRRM
μA
Ta =125℃
100
0.95
1.3
1.7
1.85
VF
V
t
rr
ns
35
5.0
Maximum DC reverse current at
rated DC blocking voltage per
diode @ VRM=VRRM
1/5
S-S784
Rev. 2.2,06-Jun-16
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com