欢迎访问ic37.com |
会员登录 免费注册
发布采购

UT75N80 参数 Datasheet PDF下载

UT75N80图片预览
型号: UT75N80
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型MOSFET [N-Channel Enhancement Mode MOSFET]
分类和应用:
文件页数/大小: 6 页 / 275 K
品牌: XINDEYI [ ShenZhen XinDeYi Electronics Co., Ltd. ]
 浏览型号UT75N80的Datasheet PDF文件第1页浏览型号UT75N80的Datasheet PDF文件第2页浏览型号UT75N80的Datasheet PDF文件第4页浏览型号UT75N80的Datasheet PDF文件第5页浏览型号UT75N80的Datasheet PDF文件第6页  
UT75N80
Electrical Characteristics (Cont.)
Symbol
Parameter
Unitpower
(T
A
= 25°C Unless Otherwise Noted)
Test Condition
UT75N80
Min.
-
-
-
-
-
-
-
-
Typ.
1.3
3000
350
200
22
14
58
25
77
22
23
Max.
-
4200
-
-
40
25
104
45
108
-
-
Unit
Dynamic Characteristics
b
R
G
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
b
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=30V,
Frequency=1.0MHz
pF
V
DD
=30V, R
L
=30Ω,
I
DS
=1A, V
GEN
=10V,
R
G
=6Ω
ns
Gate Charge Characteristics
Total Gate Charge
-
V
DS
=40V, V
GS
=10V,
I
DS
=40A
-
-
Gate-Source Charge
Gate-Drain Charge
nC
Note a : Pulse test ; pulse width≤300
µ
s, duty cycle≤2%.
Note b : Guaranteed by design, not subject to production testing.
Copyright
Unitpower Technology Ltd
Rev. P.1 - Feb., 2010
3