UT75N80
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
T
J
T
STG
I
S
I
DP
I
D
P
D
R
θJC
R
θJA
E
AS
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
300µs Pulse Drain Current Tested
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
Avalanche Energy, Single Pulsed
L=2mH
Parameter
Unitpower
Rating
80
±25
175
-55 to 175
70
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
280
70
50
100
50
1.5
62.5
0.8
W
°C/W
J
A
Unit
V
°C
Common Ratings
(T
A
=25°C Unless Otherwise Noted)
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Parameter
(T
A
= 25°C Unless Otherwise Noted)
Test Condition
UT75N80
Min.
80
-
-
2
-
-
-
-
-
Typ.
-
-
-
3
-
8
0.8
50
90
Max.
-
1
30
4
±100
11
1.3
-
-
Unit
V
GS
=0V, I
DS
=250µA
V
DS
=64V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±25V, V
DS
=0V
V
GS
=10V, I
DS
=40A
I
SD
=20A, V
GS
=0V
I
SD
=40A, dl
SD
/dt=100A/µs
V
µA
V
nA
mΩ
V
ns
nC
R
DS(ON) a
Drain-Source On-state Resistance
Diode Characteristics
V
SD
t
rr
a
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Qrr
Copyright
Unitpower Technology Ltd
Rev. P.1 - Feb., 2010
2
XINDEYI [ ShenZhen XinDeYi Electronics Co., Ltd. ]
