欢迎访问ic37.com |
会员登录 免费注册
发布采购

US3405 参数 Datasheet PDF下载

US3405图片预览
型号: US3405
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型场效应晶体管 [P-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 4 页 / 258 K
品牌: XINDEYI [ ShenZhen XinDeYi Electronics Co., Ltd. ]
 浏览型号US3405的Datasheet PDF文件第1页浏览型号US3405的Datasheet PDF文件第2页浏览型号US3405的Datasheet PDF文件第3页  
US3405
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
-V
GS
(Volts)
3
2
1
0
0
1
2
3
4
5
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
DS
=-15V
I
D
=-2.5A
Capacitance (pF)
800
Unitpoower
600
C
iss
400
200
C
oss
C
rss
0
0
5
10
15
20
25
30
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
100.0
T
J(Max)
=150°C
T
A
=25°C
40
10 s
100 s
1ms
0.1s
10ms
Power (W)
30
T
J(Max)
=150°C
T
A
=25°C
-I
D
(Amps)
R
DS(ON)
10.0 limited
20
1.0
1s
10s
DC
0.1
0.1
1
-V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
10
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
R
JA
=90°C/W
JA
.R
JA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
JA
T
Z
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance