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US3405 参数 Datasheet PDF下载

US3405图片预览
型号: US3405
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型场效应晶体管 [P-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 4 页 / 258 K
品牌: XINDEYI [ ShenZhen XinDeYi Electronics Co., Ltd. ]
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US3405
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
-10V
15
-4.5V
-I
D
(A)
6
10
-4V
5
-3.5V
V
GS
=-3V
0
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
200
Normalized On-Resistance
180
160
R
DS(ON)
(m )
140
120
100
80
60
40
0
1
2
3
4
5
6
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
400
350
300
R
DS(ON)
(m )
250
200
150
100
50
0
2
4
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
125°C
-I
S
(A)
I
D
=-2A
1.0E+01
1.0E+00
V
GS
=-10V
V
GS
=-4.5V
1.6
0
0
0.5
-I
D
(A)
4
10
Unitpoower
V
DS
=-5V
8
125°C
2
25°C
1
1.5
2
2.5
3
3.5
4
4.5
5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
V
GS
=-10V
1.4
V
GS
=-4.5V
1.2
I
D
=-2A
1
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
25°C