X22C10 – Preliminary Information
MODE SELECTION
CE
H
L
L
L
X
H
X
H
WE
X
H
L
L
H
X
H
X
RECALL
H
H
H
H
L
L
H
H
STORE
H
H
H
H
H
H
L
L
I/O
Output High Z
Output Data
Input Data HIGH
Input Data LOW
Output High Z
Output High Z
Output High Z
Output High Z
Mode
Not Selected
(3)
Read RAM
ENDURANCE AND DATA RETENTION
Parameter
Endurance
Store Cycles
Data Retention
Min.
100,000
1,000,000
100
ro
Input Pulse Levels
Input Rise and
Fall Times
Input and Output
Timing Levels
POWER-UP TIMING
Symbol
t
PUR
(5)
t
PUW
(5)
Parameter
Power-up to Read Operation
P
Max.
100
5
du
Nonvolatile Store
(4)
Nonvolatile Store
(4)
Data Changes Per Bit
Store Cycles
Years
e
Power-up to Write or Store Operation
EQUIVALENT A.C. LOAD CIRCUIT
5V
et
A.C. CONDITIONS OF TEST
0V to 3V
10ns
1.5V
bs
OUTPUT
O
Notes:
(3) Chip is deselected but may be automatically completing
a store cycle.
(4) STORE = LOW is required only to initiate the store cycle,
after which the store cycle will be automatically com-
pleted (e.g. STORE = X).
(5) t
PUR
and t
PUW
are the delays required from the time V
CC
is stable until the specified operation can be initiated.
These parameters are periodically sampled and not
100% tested.
ol
919Ω
497Ω
100pF
REV 1.0 1/30/01
www.xicor.com
Characteristics subject to change without notice.
ct
Write “1” RAM
Write “0” RAM
Array Recall
Array Recall
Units
Units
µs
ms
4 of 12
XICOR [ XICOR INC. ]
