256 Bit
X22C10
Nonvolatile Static RAM
DESCRIPTION
64 x 4
FEATURES
• High Performance CMOS
—120ns RAM Access Time
• High Reliability
—Store Cycles: 1,000,000
—Data Retention: 100 Years
• Low Power Consumption
—Active: 40mA Max.
—Standby: 100µA Max.
• Infinite Array Recall, RAM Read and Write Cycles
• Nonvolatile Store Inhibit: V
CC
= 3.5V Typical
• Fully TTL and CMOS Compatible
• JEDEC Standard 18-Pin 300-mil DIP
• 100% Compatible with X2210
—With Timing Enhancements
FUNCTIONAL DIAGRAM
NONVOLATILE E
2
PROM
MEMORY ARRAY
P
e
STORE
ARRAY
RECALL
STATIC RAM
MEMORY ARRAY
VCC
COLUMN
I/O CIRCUITS
VSS
COLUMN SELECT
A
3
A
4
A
5
ro
Xicor NOVRAMs are designed for unlimited write oper-
ations to the RAM, either RECALLs from E
2
PROM or
writes from the host. The X22C10 will reliably endure
1,000,000 STORE cycles. Inherent data retention is
greater than 100 years.
du
NC
A
4
A
3
A
2
A
1
A
0
CS
V
SS
STORE
1
2
3
4
5
6
7
8
9
A
4
A
3
A
2
A
1
A
0
CS
V
SS
STORE
1
2
3
4
5
6
7
8
The X22C10 is a 64 x 4 CMOS NOVRAM featuring a
high-speed static RAM overlaid bit-for-bit with a non-
volatile E
2
PROM. The NOVRAM design allows data to
be easily transferred from RAM to E
2
PROM (STORE)
and from E
2
PROM to RAM (RECALL). The STORE
operation is completed within 5ms or less and the
RECALL is completed within 1µs.
PIN CONFIGURATION
PLASTIC DIP
CERDIP
et
A
0
A
1
A
2
ROW
SELECT
ol
STORE
RECALL
I/O
1
I/O
2
I/O
3
I/O
4
CONTROL
LOGIC
bs
INPUT
DATA
CONTROL
O
CS
WE
REV 1.0 1/30/01
www.xicor.com
Characteristics subject to change without notice.
ct
18
17
16
15
X22C10 14
13
12
11
10
V
CC
NC
A
5
I/O
4
I/O
3
I/O
2
I/0
1
WE
SOIC
16
15
14
13
X22C10 12
11
10
9
V
CC
A
5
I/O
4
I/O
3
I/O
2
I/0
1
WE
RECALL
RECALL
1 of 12
XICOR [ XICOR INC. ]
