A
PPLICATION
N
OTE
A V A I L A B L E
AN56
16K
X20C17
High Speed AUTOSTORE
™
NOVRAM
2K x 8 Bit
FEATURES
24-Pin Standard SRAM DIP Pinout
28-Pin SOIC
Fast Access Time: 35ns, 45ns, 55ns
High Reliability
—Endurance: 1,000,000 Nonvolatile Store
Operations
—Retention: 100 Years Minimum
• AUTOSTORE™ NOVRAM
—Automatically stores SRAM data into the
E
2
PROM array when V
CC
low threshold is
detected
—E
2
PROM data automatically recalled into RAM
upon power-up
• Low Power CMOS
—Standby: 250µA
• Infinite E
2
PROM array recall, and RAM read and
write cycles
•
•
•
•
DESCRIPTION
The Xicor X20C17 is a 2K x 8 NOVRAM featuring a
high-speed static RAM overlaid bit-for-bit with a non-
volatile electrically erasable PROM (E
2
PROM) and the
AUTO-STORE feature which automatically saves the
RAM contents to E
2
PROM at power-down. The
X20C17 is fabricated with advanced CMOS floating
gate technology to achieve high speed with low power
and wide power-supply margin. The X20C17 features
a compatible JEDEC approved byte-wide memory
pinout for industry standard SRAMs.
The NOVRAM design allows data to be easily trans-
ferred from RAM to E
2
PROM (store) and E
2
PROM to
RAM (recall). The store operation is completed in
2.5ms or less. An automatic array recall operation
reloads the contents of the E
2
PROM into RAM upon
power-up.
Xicor NOVRAMS are designed for unlimited write
?operations to RAM, either from the host or recalls
from E
2
PROM, and a minimum 1,000,000 store opera-
tions to the E
2
PROM. Data retention is specified to be
greater than 100 years.
BLOCK DIAGRAM
V
CC
Sense
EEPROM Array
A
3
-A
8
Row
Select
OE
WE
Control
Logic
A
0
-A
2
A
9
-A
10
Column
Select
&
I/OS
I/O
0
-I/O
7
©
Xicor, Inc. 2000 Patents Pending
2015-2.5 10/27/00 EP
ST
CE
O
R
High Speed
2K x 8
SRAM
Array
R
EC
E
AL
L
Characteristics subject to change without notice.
1 of 12
XICOR [ XICOR INC. ]
