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5962-8852503XX 参数 Datasheet PDF下载

5962-8852503XX图片预览
型号: 5962-8852503XX
PDF下载: 下载PDF文件 查看货源
内容描述: [EEPROM, 32KX8, 250ns, Parallel, CMOS, CDIP28, CERAMIC, DIP-28]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器ATM异步传输模式内存集成电路
文件页数/大小: 28 页 / 238 K
品牌: XICOR [ XICOR INC. ]
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TABLE I. Electrical performance characteristics - Continued.  
Test  
Symbol  
Conditions  
-55°C TC +125°C  
VSS = 0 V,  
Group A  
subgroups types  
Device  
Limits  
Unit  
4.5 V VCC 5.5 V  
Min  
Max  
unless otherwise specified 1/  
Last byte loaded to  
data polling  
tWHEL  
See figure 5 or 6  
9,10,11  
All  
650 µs  
tEHEL 5/ as applicable  
CE setup time  
tELWL 5/ See figure 8  
9,10,11  
9,10,11  
All  
All  
5  
5  
µs  
µs  
5/  
Output set-up time  
tOVHWL  
CE hold time  
tWHEH 5/ │  
9,10,11  
All  
5  
µs  
5/  
OE hold time  
High voltage  
Chip erase  
tWHOH  
VH 5/  
9,10,11  
9,10,11  
9,10,11  
All  
All  
All  
5  
µs  
V  
12  
13  
210 ms  
5/  
tWLWH2  
WE pulse width for tWLWH15/ │  
chip erase  
9,10,11  
All  
10  
ms  
1/ DC and read mode.  
2/ Connect all address inputs and OE to VIH and measure IOLZ and IOHZ with the output under test connected to VOUT  
3/ All pins not being tested are to be open.  
.
4/ Tested initially and after any design or process changes that affect that parameter, and therefore shall be guaranteed to the  
limits specified in table I.  
5/ Tested by application of specified timing signals and conditions, including:  
Equivalent ac test conditions:  
Devices: All.  
Output load: 1 TTL gate and CL = 100 pF (minimum) or equivalent circuit.  
Input rise and fall times 10 ns.  
Input pulse levels: 0.4 V and 2.4 V.  
Timing measurements reference levels:  
Inputs: 1 V and 2 V.  
Outputs: 0.8 V and 2 V.  
6/ During a page write operation the cycle time defined by tWLWH and tWHWL2 shall not be less than 1 µs.  
SIZE  
STANDARD  
5962-88525  
A
MICROCIRCUIT DRAWING  
DEFENSE SUPPLY CENTER COLUMBUS  
COLUMBUS, OHIO 43218-3990  
REVISION LEVEL  
SHEET  
D
8
DSCC FORM 2234  
APR 97  
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