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5962-8852513YX 参数 Datasheet PDF下载

5962-8852513YX图片预览
型号: 5962-8852513YX
PDF下载: 下载PDF文件 查看货源
内容描述: [EEPROM, 32KX8, 250ns, Parallel, CMOS, CQCC32, CERAMIC, LCC-32]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器ATM异步传输模式内存集成电路
文件页数/大小: 28 页 / 238 K
品牌: XICOR [ XICOR INC. ]
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4. VERIFICATION  
4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38535,  
appendix A.  
4.2 Screening. Screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices  
prior to quality conformance inspection. The following additional criteria shall apply:  
a. Burn-in test, method 1015 of MIL-STD-883.  
(1) Test condition D or F. The test circuit shall be maintained by the manufacturer under document revision level  
control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify  
the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method  
1015 of MIL-STD-883.  
(2) TA = +125°C, minimum.  
(3) Devices shall be burned-in containing a checkerboard pattern or equivalent.  
b. Interim and final electrical test parameters shall be as specified in table II herein, except interim electrical parameter  
tests prior to burn-in are optional at the discretion of the manufacturer.  
c. An endurance/data retention test prior to burn-in, in accordance with method 1033 of MIL-STD-883, shall be included  
as part of the screening procedure with the following conditions:  
(1) Cycling may be block, byte, or page at equipment room ambient temperature and shall cycle all bytes for a minimum  
of 10,000 cycles for devices 01-04, 06,07, 09-12, 14,15 and a minimum of 50,000 cycles for device 05,08,13, and  
16.  
(2) After cycling, perform a high temperature unbiased bake for 72 hours at +150°C (minimum). The storage time may  
be accelerated by using higher temperature in accordance with the Arrhenius Relationship:  
A = acceleration factor (unitless quantity) = t / t  
2
F
1
T = temperature in Kelvin (i.e., t + 273)  
1
t1 = time (hrs) at temperature T1  
t2 = time (hrs) at temperature T2  
K = Boltzmanns constant = 8.62 x 10-5eV/°K using an apparent activation energy (E ) of 0.6 eV.  
A
The maximum storage temperature shall not exceed +200°C for packaged devices or +300°C for unassembled devices.  
(3) Read the data retention pattern and test using subgroups 1, 7, and 9 (minimum, e.g., high temperature equivalent  
subgroups 2, 8A, and 10 may be used) after cycling and bake, prior to burn-in. Devices having bits not in the proper  
state after storage shall constitute a device failure.  
4.3 Quality conformance inspection. Quality conformance inspection shall be in accordance with method 5005 of  
MIL-STD-883 including groups A, B, C, and D inspections. The following additional criteria shall apply.  
4.3.1 Group A inspection.  
a. Tests shall be as specified in table II herein.  
b. Subgroups 5 and 6 in table I, method 5005 of MIL-STD-883 shall be omitted.  
c. Subgroup 4 (CI and CO measurement) shall be measured only for the initial test and after process or design changes  
which may affect input or output capacitance.  
SIZE  
STANDARD  
5962-88525  
A
MICROCIRCUIT DRAWING  
DEFENSE SUPPLY CENTER COLUMBUS  
COLUMBUS, OHIO 43218-3990  
REVISION LEVEL  
SHEET  
D
20  
DSCC FORM 2234  
APR 97  
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