WM8783
Production Data
ELECTRICAL CHARACTERISTICS
Test Conditions
AVDD = 3.3V, GND = 0V, TA = +25oC, 1kHz signal, fs = 48kHz, MCLK = 256fs unless otherwise stated. LRCLK transition
as per Figure 4.
PARAMETER
SYMBOL
TEST CONDITIONS
Single-ended input
MIN
TYP
MAX
UNIT
Analogue Inputs (IN1L, IN1R)
Maximum input signal
level
AVDD/3.3
Vrms
Input resistance
66
20
kΩ
pF
Input capacitance
ADC Input Path Performance (Analogue Input to ADC)
Signal to Noise Ratio
SNR
A-weighted, fs = 48kHz
Unweighted, fs = 48kHz
A-weighted, fs = 96kHz
Unweighted, fs = 96kHz
-1dBFS input, fs = 48kHz
-1dBFS input, fs = 96kHz
96
94
dB
96
94
Total Harmonic
Distortion
THD
-83
-83
85
dB
Channel separation
(Left/Right)
dB
dB
Power Supply Rejection
Ratio (with respect to
AVDD)
PSRR
1kHz 100mV pk-pk applied to
AVDD
50
Digital Inputs / Outputs
Input high level
0.7 x AVDD
0.9 x AVDD
V
V
Input low level
0.3 x AVDD
0.1 x AVDD
1
Output high level
Output low level
Input capacitance
Input leakage
IOL = 1mA
IOH = -1mA
V
V
5
pF
μA
-1
Clocking
MCLK frequency
2.048
-4%
12.288
+4%
MHz
Analogue Reference Levels
Midrail Reference
Voltage
VMID
RVMID
AVDD/2
33
V
VMID resistance to
Ground
kΩ
Current Consumption
AVDD Current
Consumption
IAVDD
Quiescent
7.93
8.74
0.24
mA
fs = 48kHz, MCLK = 256fs
Quiescent
fs = 96kHz, MCLK = 128fs
Quiescent
No clocks applied
PD, August 2010, Rev 4.0
6
w
WOLFSON [ WOLFSON MICROELECTRONICS PLC ]
