The Communications Edge
TM ECP100D
1 Watt, High Linearity InGaP HBT Amplifier
Product Information
Product Features
Product Description
Functional Diagram
The ECP100D is a high dynamic range driver amplifier
in a low-cost surface mount package. The InGaP/GaAs
HBT is able to achieve superior performance for various
narrowband-tuned application circuits with up to +46
dBm OIP3 and +31.5 dBm of compressed 1-dB power.
It is housed in an industry standard Lead-
free/Green/RoHS-compliant 16-pin 4x4mm QFN SMT
package. All devices are 100% RF and DC tested.
xꢀ 400 – 2300 MHz
16 15
14 13
N/C
12
11
10
9
1
2
3
4
xꢀ +31.5 dBm P1dB
Vref
N/C
RFOUT
RFOUT
N/C
xꢀ +46 dBm Output IP3
xꢀ 18 dB Gain @ 900 MHz
xꢀ 12 dB Gain @ 1960 MHz
xꢀ Single Positive Supply (+5V)
RFIN
N/C
5
6
7
8
xꢀ Lead-free/Green/RoHS-compliant
The product is targeted for use as driver amplifier for
various current and next generation wireless
technologies such as GPRS, GSM, CDMA, W-CDMA,
and UMTS, where high linearity and high power is
required. The internal active bias allows the ECP100D
to maintain high linearity over temperature and operate
directly off a +5 V supply.
Function
Vref
RF Input
RF Output
Vbias
Pin No.
16pin 4mm QFN package
1
3
10, 11
16
Backside Paddle
2, 4-9, 12-15
Applications
GND
N/C or GND
xꢀ Final stage amplifiers for
Repeaters
xꢀ Mobile Infrastructure
xꢀ Defense / Homeland Security
Typical Performance (4)
Specifications (1)
Parameter
Frequency
S21 – Gain
S11
S22
Output P1dB
Output IP3
Units
MHz
dB
dB
dB
dBm
dBm
Typical
1960
Parameter
Operational Bandwidth
Test Frequency
Gain
Units Min Typ Max
900
18
-13
-7
+31
+46
+25.
5
2140
11
-18
-8
+31.5
+45
MHz
MHz
dB
400
2300
12
2140
11
-11
-10
+32
+46
10
Input Return Loss
Output Return Loss
Output P1dB
dB
18
dB
8
dBm
dBm +43.8
+29
+31.5
+45
Output IP3 (2)
IS-95A Channel Power
dBm
+25.5
@ -45 dBc ACPR
IS-95 Channel Power
dBm
+25.5
+23
@-45dBc ACPR, 1960MHz
W-CDMAChannelPower
dBm
dB
+23
6.2
@ -45 dBc ACPR
W-CDMA Channel Power
dBm
dB
mA
V
@ -45 dBc ACPR, 2140 MHz
Noise Figure
7.0
5.5
Supply Bias (3)
+5 V @ 450 mA
Noise Figure
6.3
450
5
Operating Current Range , Icc (3)
Device Voltage, Vcc
400
500
4. Typical parameters reflect performance in a tuned application circuit at +25 C.
1. Test conditions unless otherwise noted: T = 25 ºC, Vsupply = +5 V in a tuned application circuit.
2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions into
pins 10, 11 and 16. It is expected that the current can increase by an additional 90 mA at P1dB.
Pin 1 is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will
pull 10.8 mA of current when used with a series bias resistor of R1=51 . (ie. total device current
typically will be 461 mA.)
Absolute Maximum Rating
Parameter
Rating
-40 to +85 qC
-65 to +125 qC
+26 dBm
+8 V
Ordering Information
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Part No.
ECP100D-G
Description
1 Watt InGaP HBT Amplifier
(Lead-free/Green/RoHS-compliant 16-pin 4x4mm Pkg.)
ECP100D-PCB900
900 MHz Evaluation Board
Device Current
900 mA
ECP100D-PCB1960 1960 MHz Evaluation Board
ECP100D-PCB2140 2140 MHz Evaluation Board
Device Power
Junction Temperature
5 W
+250 qC
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
Web site: www.wj.com Page 1 of 7 April 2006
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com
WJCI [ WJ COMMUNICATION. INC. ]
