Electrical Characteristics
(T
C
=25C unless otherwise noted)
Characteristic
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Forward transfer conductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
④
④
Symbol
BV
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Test Condition
I
D
=250uA, V
GS
=0V
I
D
=250uA, V
DS
=V
GS
V
DS
=700V, V
GS
=0V
V
DS
=0V, V
GS
=30V
V
GS
=10V, I
D
=4.0A
V
DS
=10V, I
D
=4.0A
V
GS
=0V, V
DS
=25V
f=1 MHz
Min.
700
2.0
-
-
-
-
-
-
-
-
Typ. Max. Unit
-
-
-
-
0.77
11
2006
148
13.7
23
69
144
77
32
9
8
-
4.0
1
100
0.90
-
2507
185
17.1
-
-
-
-
40
-
-
nC
ns
pF
V
V
uA
nA
S
V
DD
=300V, I
D
=8A
R
G
=25Ω
③④
-
-
-
-
-
③④
-
V
DS
=560V, V
GS
=10V
I
D
=8A
Source-Drain Diode Ratings and Characteristics
(T
C
=25C unless otherwise noted)
Characteristic
Source current (DC)
Source current (Pulsed)
Forward voltage
Reverse recovery time
Reverse recovery charge
①
④
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Test Condition
Integral reverse diode
in the MOSFET
V
GS
=0V, I
S
=8A
I
S
=8A, V
GS
=0V
dI
F
/dt=100A/us
Min.
-
-
-
-
-
Typ. Max. Unit
-
-
-
420
4.2
8
32
1.4
-
-
A
V
ns
uC
Note ;
①
Repetitive rating : Pulse width limited by maximum junction temperature
②
L=7.74mH, I
AS
=8A, V
DD
=50V, R
G
=25Ω, Starting T
J
=25C
③
Pulse Test : Pulse width≤300us, Duty cycle≤2%
④
Essentially independent of operating temperature
WISDOM [ WISDOM TECHNOLOGIES INT`L ]
