Wisdom
Semiconductor
WFP7N 70
N-Channel MOSFET
Features
■
■
■
■
■
R
DS(on)
(Max 0.9
Ω
)@V
GS
=10V
Gate Charge (Typical 32nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
Symbol
●
2. Drain
1. Gate
◀
●
●
▲
3. Source
General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switching DC/DC converters, switch mode power
supply, DC-AC converters for uninterruped power supply, motor
control.
TO-220
1 2
3
Absolute Maximum Ratings
(
T
C
=25C unless otherwise noted)
Characteristic
Drain-source voltage
Gate-source voltage
Drain current (DC)
*
Symbol
V
DSS
V
GSS
I
D
T
C
=25C
T
C
=100C
I
DM
P
D
②
②
①
①
Rating
700
30
8
4.8
32
60
8
266
8
11.6
150
-55~150
Unit
V
V
A
A
A
W
A
mJ
A
mJ
C
Drain current (Pulsed)
Power dissipation
*
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
Junction temperature
Storage temperature range
I
AS
E
AS
I
AR
E
AR
T
J
T
stg
* Limited by maximum junction temperature
Characteristic
Thermal
resistance
Junction-case
Junction-ambient
Symbol
R
th(J-C)
R
th(J-A)
Typ.
-
-
Max.
3.1
62.5
Unit
C/W
WISDOM [ WISDOM TECHNOLOGIES INT`L ]
