Typical Characteristics
V
Top: 15.0GVS
2
10.0V
102
101
100
10
8.0V
7.0V
6.0V
5.5V
5.0V
Bottom: 4.5V
1
10
175℃
25℃
※ Notes :
※Note:
1. 250µ s Pulse Test
2. TC = 25℃
1. VDS = 30V
2. 250µ s Pulse Test
-55℃
0
10
2
4
6
8
10
-1
10
0
10
101
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.05
0.04
0.03
0.02
0.01
0.00
102
101
100
VGS = 10V
VGS = 20V
※Notes :
1. VGS = 0V
2. 250µ s Pulse Test
25℃
175℃
※Note : T = 25℃
J
0
50
100
150
200
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID, Drain Current [A]
V , Source-Drain voltage [V]
SD
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
3500
12
C
C
C
iss = Cgs + Cgd (Cds = shorted)
oss = Cds + Cgd
rss = Cgd
3000
2500
2000
1500
1000
500
VDS = 30V
VDS = 48V
10
8
C
oss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
C
iss
6
4
C
rss
2
※ Note : ID = 50A
0
10
0
-1
100
101
0
5
10
15
20
25
30
35
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Figure 5. Capacitance Characteristics
WISDOM [ WISDOM TECHNOLOGIES INT`L ]
