WFY6N02
Electrical Characteristics (Tc = 25°C)
Characteristics
Gate leakage current(Note 4)
Drain cut−off current(Note 4)
Drain−source breakdown voltage
Gate threshold voltage
Symbol
Test Condition
VGS = ±10 V, VDS = 0 V
VDS = 16 V, VGS = 0 V
ID = 250 μA, VGS = 0 V
VDS = VDS ID =-250 μA
VGS = 4.5 V, ID = 3A
VGS = 2.5 V, ID = 2.0 A
VGS = 1.8 V, ID = 1.0 A
VDS = 5.0 V, ID = 2.8 A
VDS =10 V,
Min
Type
-
Max
±100
-1
-
Unit
nA
μA
V
IGSS
-
-
IDSS
-
V(BR)DSS
VGS(th)
20
0.5
-
-
-
1.0
40
55
110
-
V
32
40
65
6.5
430
90
110
5
Drain−source ON resistance
RDS(ON)
mΩ
S
Forward Transconductance
Input capacitance
gfs
Ciss
Crss
Coss
td(on)
tr
-
-
-
-
-
-
-
-
-
-
-
-
Reverse transfer capacitance
Output capacitance
VGS = 0 V,
-
pF
f = 1 MHz
-
Turn-on Delay time
10
28
48
28
8
VGS =4.5 V,
Switching
Turn−on Rise time
time
VDS =10V,
15
26
15
6
ns
ID = 1.0 A,
Turn-off Delay time
td(off)
tf
(Note 5)
RG = 6 Ω, RL=10 Ω
Turn−off Fall time
Total gate charge
Qg
Qgs
Qgd
VGS =4.5V,
VDS =10V,
ID = 6 A
Gate−source charge
0.7
3
-
nC
Gate−drain (“miller”) Charge
-
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Symbol
Test Condition
Min Type Max Unit
IDR
-
-
-
-
-
6
A
A
V
IDRP
-
-
20
1.3
VDSF
IDR = 1A, VGS = 0 V
0.7
Note 4: Pulse Test: Pulse Width ≤300μs, Duty Cycle 3 2%.
Note 5: Switching characteristics are independent of operating junction temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/6
Steady, keep you advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
