WFY6N02
20V N−Channel MOSFET
Features
■ 6A, 20V, RDS(on)(Max 40mΩ)@VGS=4.5V
■ 1.8 V Rated for Low Voltage Gate Drive
■ SOT-23 Surface Mount for Small Footprint
■ Single Pulse Avalanche Energy Rated
■ RoHS compliant
General Description
D
This MOSFET is produced using Winsemi’s advanced MOS
technology. This latest technology has been especially designed
to minimize on-state resistance, have a high rugged avalanche
characteristics. This devices is specially well suited for Load
switching and PAswitching.
S
G
SOT-23
Absolute Maximum Ratings(Tc=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VDSS
Drain Source Voltage
20
V
ID
Continuous Drain Current
Drain Current Pulsed
6
20
A
A
IDM
PD
Total Power Dissipation(Note 1)
Gate to Source Voltage
0.3
W
V
VGS
TJ, Tstg
TL
±12
Junction and Storage Temperature
-55~150
260
℃
℃
Maximum lead Temperature for soldering purposes
Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are
individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may be affected.
Thermal Characteristics
Value
Typ
Symbol
Parameter
Units
Min
-
Max
170
110
Thermal Resistance, Junction-to-Ambient(Note 1)
Thermal Resistance, Junction-to-Ambient(Note 1)
Thermal Resistance, Junction-to-Ambient(Note 2)
-
℃/W
℃/W
℃/W
RQJA
RQJA
RQJA
300
Note 1: Surface−mounted on FR4 board using 1 in sq pad size (Mounted on a ceramic board (1000mm2×0.8mm) 1units)
Note 2: Surface−mounted on FR4 board using the minimum recommended pad size.
Rev. A Mar.2010-H04F
P12-3
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
