WFSA5510
P-Channel Electrical Characteristics at Ta=250C
Ratings
Unit
Parameter
Symbol
Conditions
min typ max
Drain-to-Source Breakdown Voltage
V(BR)DSS
IDSS
ID=-250uA, VGS=0V
VDS=-80V, VGS=0V
VGS=+16V, VDS=0V
VDS= VGS, ID=-250uA
ID=-2A, VGS=-10V
ID=-1.5A, VGS=-4V
VDS=-30V,
-100
-
-
V
uA
nA
V
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
-
-
-1
IGSS
VGS(th)
RDS(ON)
RDS(ON)
Ciss
-
-
+10
-2.6
225
315
-
-1.2
-1.8
176
225
1050
70
-
-
-
-
-
-
-
-
-
-
-
-
-
mΩ
mΩ
Static Drain-to-Source On-State Resistance
Input Capacitance
VGS=0V,
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Coss
Crss
-
pF
f=1MHz
40
-
td(on)
tr
td(off)
tf
9
17
19
147
149
30
-
VGEN=-10V,
VDS=-30V,
10
nS
RL=30Ω, ID=1A,
RGEN=6Ω
Turn-off Delay Time
Fall Time
81
82
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qg
21.3
3.2
4.5
-0.75
VDS=-50V,
VGS=-10V,
ID=-2A
Qgs
nC
V
Qgd
-
VSD
IS=-2.5A, VGS=0V
-1.3
5/10
Steady, keep you advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
