WFSA5510
N-Channel Electrical Characteristics at Ta=250C
Ratings
Unit
Parameter
Symbol
Conditions
min typ max
Drain-to-Source Breakdown Voltage
V(BR)DSS
IDSS
ID=250uA, VGS=0V
VDS=80V, VGS=0V
VGS=+16V, VDS=0V
VDS= VGS, ID=250uA
ID=2A, VGS=10V
ID=1.5A, VGS=4V
VDS=30V,
100
-
-
V
uA
nA
V
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
-
-
-
1
IGSS
VGS(th)
RDS(ON)
RDS(ON)
Ciss
-
+10
2.6
220
310
-
1.2
-
1.8
175
220
470
40
25
6
mΩ
mΩ
Static Drain-to-Source On-State Resistance
-
Input Capacitance
-
VGS=0V,
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Coss
Crss
-
-
pF
f=1MHz
-
-
td(on)
tr
td(off)
tf
-
12
15
46
37
17
-
VGEN=10V,
VDS=30V,
-
8
nS
RL=30Ω, ID=1A,
RGEN=6Ω
Turn-off Delay Time
Fall Time
-
25
20
12
1.8
1
-
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qg
-
N-Channel
Qgs
VDS=50V, VGS=10V,
ID=2A
-
nC
V
Qgd
-
-
VSD
IS=2.5A, VGS=0V
-
0.75
1.3
2/10
Steady, keep you advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
