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WFP12N65 参数 Datasheet PDF下载

WFP12N65图片预览
型号: WFP12N65
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOSFET [Silicon N-Channel MOSFET]
分类和应用:
文件页数/大小: 7 页 / 613 K
品牌: WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
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WFP12N65  
Electrical Characteristics (Tc = 25°C)  
Characteristics  
Symbol  
IGSS  
Test Condition  
VGS = ±30 V, VDS = 0 V  
IG = ±10 μA, VDS = 0 V  
VDS = 650 V, VGS = 0 V  
VDS = 480 V, Tc = 125℃  
ID = 250 μA, VGS = 0 V  
VDS = 10 V, ID =250 μA  
VGS = 10 V, ID = 6A  
VDS = 50 V, ID = 6A  
VDS = 25 V,  
Min  
Type Max Unit  
Gate leakage current  
-
-
±100  
nA  
Gate−source breakdown voltage  
Drain cut−off current  
V(BR)GSS  
±30  
-
-
V
-
-
10  
μA  
μA  
V
IDSS  
-
-
100  
Drain−source breakdown voltage  
Gate threshold voltage  
Drain−source ON resistance  
Forward Transconductance  
Input capacitance  
V(BR)DSS  
VGS(th)  
RDS(ON)  
gfs  
650  
-
-
2
-
-
-
-
-
-
-
-
-
-
4
V
0.64  
6.4  
1830  
155  
2.0  
50  
49  
310  
54  
0.8  
Ω
-
-
-
-
-
-
-
-
S
Ciss  
VGS = 0 V,  
Reverse transfer capacitance  
Output capacitance  
Crss  
Coss  
tr  
pF  
ns  
f = 1 MHz  
Rise time  
VDD =325 V,  
ID =12A  
Turn−on time  
Switching time  
ton  
RG=25 Ω  
Fall time  
tf  
(Note4,5)  
Turn−off time  
Total gate charge (gate−source  
plus gate−drain)  
toff  
VDD = 520 V,  
VGS = 10 V,  
ID = 12 A  
Qg  
-
51.7  
-
nC  
Gate−source charge  
Qgs  
Qgd  
-
-
9.6  
-
-
(Note4,5)  
Gate−drain (“miller”) Charge  
18.6  
Source−Drain Ratings and Characteristics (Ta = 25°C)  
Un  
it  
Characteristics  
Symbol  
Test Condition  
Min Type Max  
Continuous drain reverse current  
Pulse drain reverse current  
Forward voltage (diode)  
IDR  
IDRP  
VDSF  
trr  
-
-
-
-
-
-
-
-
-
12  
48  
1.4  
-
A
A
IDR = 12 A, VGS = 0 V  
-
V
Reverse recovery time  
450  
5.0  
ns  
μC  
IDR = 12 A, VGS = 0 V,  
dIDR / dt = 100 A / μs  
Reverse recovery charge  
Qrr  
-
Note 1.Repeativity rating :pulse width limited by junction temperature  
2.L=14mH,IAS=12A,VDD=95V,RG=25Ω,Starting TJ=25℃  
3.ISD≤12A,di/dt≤200A/us, VDD<BVDSS,STARTING TJ=25℃  
4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%  
5.Essentially independent of operating temperature.  
This transistor is an electrostatic sensitive device  
Please handle with caution  
2/7  
Steady, all for your advance