WFP12N65
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
IGSS
Test Condition
VGS = ±30 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
VDS = 650 V, VGS = 0 V
VDS = 480 V, Tc = 125℃
ID = 250 μA, VGS = 0 V
VDS = 10 V, ID =250 μA
VGS = 10 V, ID = 6A
VDS = 50 V, ID = 6A
VDS = 25 V,
Min
Type Max Unit
Gate leakage current
-
-
±100
nA
Gate−source breakdown voltage
Drain cut−off current
V(BR)GSS
±30
-
-
V
-
-
10
μA
μA
V
IDSS
-
-
100
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward Transconductance
Input capacitance
V(BR)DSS
VGS(th)
RDS(ON)
gfs
650
-
-
2
-
-
-
-
-
-
-
-
-
-
4
V
0.64
6.4
1830
155
2.0
50
49
310
54
0.8
Ω
-
-
-
-
-
-
-
-
S
Ciss
VGS = 0 V,
Reverse transfer capacitance
Output capacitance
Crss
Coss
tr
pF
ns
f = 1 MHz
Rise time
VDD =325 V,
ID =12A
Turn−on time
Switching time
ton
RG=25 Ω
Fall time
tf
(Note4,5)
Turn−off time
Total gate charge (gate−source
plus gate−drain)
toff
VDD = 520 V,
VGS = 10 V,
ID = 12 A
Qg
-
51.7
-
nC
Gate−source charge
Qgs
Qgd
-
-
9.6
-
-
(Note4,5)
Gate−drain (“miller”) Charge
18.6
Source−Drain Ratings and Characteristics (Ta = 25°C)
Un
it
Characteristics
Symbol
Test Condition
Min Type Max
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
IDR
IDRP
VDSF
trr
-
-
-
-
-
-
-
-
-
12
48
1.4
-
A
A
IDR = 12 A, VGS = 0 V
-
V
Reverse recovery time
450
5.0
ns
μC
IDR = 12 A, VGS = 0 V,
dIDR / dt = 100 A / μs
Reverse recovery charge
Qrr
-
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=14mH,IAS=12A,VDD=95V,RG=25Ω,Starting TJ=25℃
3.ISD≤12A,di/dt≤200A/us, VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, all for your advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
