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WFP12N65 参数 Datasheet PDF下载

WFP12N65图片预览
型号: WFP12N65
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOSFET [Silicon N-Channel MOSFET]
分类和应用:
文件页数/大小: 7 页 / 613 K
品牌: WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
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WFP12N65  
Silicon N-Channel MOSFET  
Features  
■ 12A,650V,RDS(on)(Max0.8Ω)@VGS=10V  
■ Ultra-low Gate Charge(Typical 51.7nC)  
■ Fast Switching Capability  
■ 100%Avalanche Tested  
■ Maximum Junction Temperature Range(150)  
General Description  
This Power MOSFET is produced using Winsemi’s advanced  
planar stripe, VDMOS technology. This latest technology has been  
especially designed to minimize on-state resistance, have a high  
rugged avalanche characteristics. This devices is specially well  
suited for AC-DCswitching power supplies, DC-DCpower converters,  
high voltage H-bridge motor drive PWM  
Absolute Maximum Ratings  
Symbol  
Parameter  
Value  
650  
Units  
V
VDSS  
Drain Source Voltage  
Continuous Drain Current(@Tc=25)  
Continuous Drain Current(@Tc=100)  
Drain Current Pulsed  
12  
A
ID  
A
IDM  
VGS  
EAS  
(Note1)  
A
Gate to Source Voltage  
±30  
990  
V
Single Pulsed Avalanche Energy  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
(Note 2)  
(Note 1)  
(Note 3)  
mJ  
mJ  
V/ns  
W
EAR  
dv/dt  
22  
4.5  
Total Power Dissipation(@Tc=25℃)  
Derating Factor above 25℃  
Junction and Storage Temperature  
Channel Temperature  
178  
PD  
1.43  
-55~150  
300  
W/℃  
TJ, Tstg  
TL  
Thermal Characteristics  
Value  
Symbol  
Parameter  
Units  
Min  
Typ  
Max  
0.70  
-
RQJC  
RQCS  
RQJA  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Case-to-Sink  
-
-
-
-
-
-
/W  
/W  
/W  
Thermal Resistance, Junction-to-Ambient  
62.5  
Rev.A Oct.2010  
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.