WFP12N65
Silicon N-Channel MOSFET
Features
■ 12A,650V,RDS(on)(Max0.8Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 51.7nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced
planar stripe, VDMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
suited for AC-DCswitching power supplies, DC-DCpower converters,
high voltage H-bridge motor drive PWM
Absolute Maximum Ratings
Symbol
Parameter
Value
650
Units
V
VDSS
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
Drain Current Pulsed
12
A
ID
A
IDM
VGS
EAS
(Note1)
A
Gate to Source Voltage
±30
990
V
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 3)
mJ
mJ
V/ns
W
EAR
dv/dt
22
4.5
Total Power Dissipation(@Tc=25℃)
Derating Factor above 25℃
Junction and Storage Temperature
Channel Temperature
178
PD
1.43
-55~150
300
W/℃
℃
TJ, Tstg
TL
℃
Thermal Characteristics
Value
Symbol
Parameter
Units
Min
Typ
Max
0.70
-
RQJC
RQCS
RQJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
-
-
-
-
-
-
℃/W
℃/W
℃/W
Thermal Resistance, Junction-to-Ambient
62.5
Rev.A Oct.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
