WFN1N60
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
IGSS
Test Condition
VGS=±30V,VDS=0V
IG=±10 µA,VDS=0V
VDS=600V,VGS=0V
VDS=480V,TC=125℃
ID=250 µA,VGS=0V
ID=1mA,Referenced to
25℃
Min Type Max Unit
Gate leakage current
-
±30
-
-
-
-
±100
nA
V
Gate-source breakdown voltage
Drain cut -off current
V(BR)GSS
-
10
100
-
µA
µA
V
IDSS
Drain -source breakdown voltage
Breakdown voltage Temperature
Coefficient
V(BR)DSS
600
-
-
△BVDSS
△TJ
VGS(th)
RDS(ON)
gfs
/
0.65
-
V/℃
Gate threshold voltage
Drain -source ON resistance
Forward Transconductance
Input capacitance
VDS=VGS,ID=250 µA
VGS=10V,ID=0.65A
VDS=50V,ID=6.5A
VDS=25V,
2.0
-
4.0
8.5
-
V
Ω
S
-
-
-
-
-
-
-
-
-
7.7
1.3
247
4.9
23
Ciss
319
6.4
30
72
26
59
59
VGS=0V,
Reverse transfer capacitance
Output capacitance
Crss
pF
ns
f=1MHz
Coss
Turn-On Rise time
tr
VDD=300V,
ID=1.3A
33
Turn-on delay time
Switching time
Td(on)
tf
11
RG=25Ω
(Note4,5)
Turn-On Fall time
26
Turn-off delay time
Total gate charge(gate-source
plus gate-drain)
Td(off)
26
VDD=480V,
VGS=10V,
ID=1.3A
Qg
-
9.1
12
nC
Gate-source charge
Qgs
Qgd
-
-
1.2
4.5
-
-
(Note4,5)
Gate-drain("miller") Charge
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol Test Condition
Min Type Max Unit
Continuous drain reverse current
Pulse drain reverse current
Forward voltage(diode)
Reverse recovery time
IDR
IDRP
VDSF
trr
-
-
-
-
-
-
-
-
-
1.3
5.0
1.4
-
A
A
IDR=1.3A,VGS=0V
IDR=1.3A,VGS=0V,
dIDR / dt =100 A / µs
-
V
163
0.85
ns
µC
Reverse recovery charge
Qrr
-
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=92mH IAS=1.3A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤1.3A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
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