WFN1N60
Silicon N-Channel MOSFET
Features
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1.3A,600V, RDS(on)(Max8.5Ω)@VGS=10V
Ultra-low Gate charge(Typical 9.1nC)
Fast Switching Capability
100%Avalanche Tested
Maximum Junction Temperature Range(150℃)
General Description
Th is Power MO SFET is produced using Winse mi’s advan
ced planar stripe, VDMOS technology. This latest technology
has been especially designed to minimize on-state
resistance, have a high rugged avalanche characteristics.
This devices is specially well suited for high efficiency switch
mode power supply. electronic Lamp ballasts based on half
bridge and UPS.
Absolute Maximum Ratings
Symbol
Parameter
Value
600
1.3
Units
V
VDSS
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
Drain Current Pulsed
A
ID
0.84
5.0
A
IDM
VGS
EAS
(Note1)
A
Gate to Source Voltage
±30
78
V
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
Derating Factor above 25℃
Junction and Storage Temperature
Channel Temperature
(Note2)
(Note1)
(Note3)
mJ
mJ
V/ ns
W
EAR
dv/dt
3.9
5.5
5
PD
0.05
-55~150
300
W/℃
℃
TJ,Tstg
TL
℃
Thermal Characteristics
Value
Symbol
Parameter
Units
Min
Typ
Max
25
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
-
-
℃/W
℃/W
-
-
120
Rev.A Aug.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
