WFF634
Electrical Characteristics (Tc = 25° C)
Characteristics
Symbol
IGSS
Test Condition
VGS = ±20 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
Min
-
Type Max Unit
Gate leakage current
-
±100
nA
Gate−source breakdown voltage
Drain cut−off current
V(BR)GSS
±20
-
-
V
IDSS
VDS = 200 V, VGS = 0 V
ID = 250 μA, VGS = 0 V
-
-
-
1
-
μA
V
Drain−source breakdown voltage
Break Voltage Temperature
Coefficient
V(BR)DSS
ΔBVDSS/
ΔTJ
250
V/℃
ID=250μA, Referenced to 25℃
-
0.37
-
Gate threshold voltage
Drain−source ON resistance
Forward Transconductance
Input capacitance
VGS(th)
RDS(ON)
gfs
VDS = 10 V, ID =250 μA
VGS = 10 V, ID = 5.1A
VDS = 50 V, ID = 5.1A
VDS = 25 V,
2
-
-
4
V
Ω
S
-
0.45
1.6
-
-
-
-
-
-
-
-
-
Ciss
-
-
-
-
-
-
-
1220
32
130
9.6
21
42
19
VGS = 0 V,
Reverse transfer capacitance
Output capacitance
Crss
pF
ns
f = 1 MHz
Coss
tr
Rise time
VDD =125 V,
ID =5.6A
Turn−on time
Switching time
ton
RG=12Ω
Fall time
tf
(Note4,5)
Turn−off time
Total gate charge (gate−source
plus gate−drain)
toff
VDD = 200 V,
VGS = 10 V,
ID = 5.6A
Qg
-
41
51.8
nC
Gate−source charge
Qgs
Qgd
-
-
6.5
22
-
-
(Note4,5)
Gate−drain (“miller”) Charge
Source−Drain Ratings and Characteristics (Ta = 25° C)
Characteristics
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Symbol
IDR
Test Condition
Min Type Max Unit
-
-
-
-
-
-
-
8.1
32
2
A
IDRP
-
-
A
VDSF
trr
IDR = 8.1 A, VGS = 0 V
1.4
198
1.2
V
Reverse recovery time
-
ns
μC
IDR = 5.6 A, VGS = 0 V,
dIDR / dt = 100 A / μs
Reverse recovery charge
Qrr
2.4
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=500uH,IAS=9 A,VDD=50V,RG=0Ω,Starting TJ=25℃
3.ISD≤9A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test: Pulse Width≤300us,DutyCycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
