WFF634
Silicon N-Channel MOSFET
Features
■ 9A, 250V, RDS(on)(Max 0.45Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 41nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
Thi s Po w e r MO S FE T is pr o d u c e d us i n g Wi n s e m i ’ s a dv a n c e d
planar str ip e, DMOS techn olog y. This latest technology has been
especially designed to minimize on- state resistance, have a high
rugged avalanche character ist ics. This devices is specially well
sui t e d fo r lo w vo l ta g e a pp l i c a t i o n s suc h as au t o m o t i v e , hi g h
efficiency switching for DC/DC converters, and DC motor control.
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
Drain Source Voltage
250
V
VDSS
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
Drain Current Pulsed
9
5
A
A
ID
IDM
VGS
EAS
(Note1)
72
A
Gate to Source Voltage
±20
300
7.4
V
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 3)
mJ
mJ
V/ns
W
EAR
dv/dt
4.8
Total Power Dissipation(@Tc=25℃)
Derating Factor above 25℃
Junction and Storage Temperature
Channel Temperature
48
PD
0.42
-55~150
300
W/℃
℃
TJ, Tstg
TL
℃
*Drain current limited by junction temperature
Thermal Characteristics
Value
Symbol
Parameter
Units
Min
Typ
Max
2.60
-
RQJC
RQCS
RQJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
-
-
-
-
0.5
-
℃/W
℃/W
℃/W
Thermal Resistance, Junction-to-Ambient
62.5
Rev.A Jun.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
