WFD2N60
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
IGSS
Test Condition
VGS=±30V,VDS=0V
IG=±10 µA,VDS=0V
Min
Type Max Unit
Gate leakage current
-
-
-
-
±100
-
nA
V
Gate-source breakdown voltage
Drain cut -off current
V(BR)GSS
±30
VDS=600V,VGS=0V
-
10
100
-
µA
µA
V
IDSS
VDS=480V,Tc=125℃
-
Drain -source breakdown voltage
Gate threshold voltage
Drain -source ON resistance
Forward Transconductance
Input capacitance
V(BR)DSS
VGS(th)
RDS(ON)
gfs
ID=250 µA,VGS=0V
VDS=10V,ID=250 µA
VGS=10V,ID=1A
VDS=50V,ID=1A
VDS=25V,
600
-
-
2
-
-
-
-
-
-
-
-
-
4
V
3.8
2.05
380
7.6
35
5.0
-
Ω
S
Ciss
490
9.9
46
40
110
90
90
VGS=0V,
Reverse transfer capacitance
Output capacitance
Crss
Coss
tr
pF
ns
f=1MHz
Rise time
VDD=300V,
ID=2A,
16
Turn-on time
Switching time
ton
50
RG=25Ω,
Fall time
tf
40
(Note4,5)
Turn-off time
Total gate charge(gate-source
plus gate-drain)
toff
40
VDD=320V,
VGS=10V,
ID=2A
Qg
-
15.3
19
nC
Gate-source charge
Qgs
Qgd
-
-
1.8
7.2
-
-
(Note4,5)
Gate-drain("miller") Charge
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol Test Condition
Min Type Max Unit
Continuous drain reverse current
Pulse drain reverse current
Forward voltage(diode)
Reverse recovery time
IDR
IDRP
VDSF
trr
-
-
-
-
-
-
-
-
2.0
6.0
1.4
-
A
A
-
IDR=2.0A,VGS=0V
IDR=2.0A,VGS=0V,
dIDR / dt =100 A / µs
-
V
250
1.31
ns
µC
Reverse recovery charge
Qrr
-
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=55mH IAS=2A,VDD=50V,RG=0Ω ,Starting TJ=25℃
3.ISD≤2A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
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