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WFD2N60 参数 Datasheet PDF下载

WFD2N60图片预览
型号: WFD2N60
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOSFET [Silicon N-Channel MOSFET]
分类和应用:
文件页数/大小: 7 页 / 502 K
品牌: WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
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WFD2N60  
Silicon N-Channel MOSFET  
Features  
2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V  
Ultra-low Gate Charge(Typical 15.3nC)  
Fast Switching Capability  
100%Avalanche Tested  
Maximum Junction Temperature Range(150℃)  
General Description  
This Power MOSFET is produced using Winsemi's advanced  
planar stripe,VDMOS technology.This latest technology has been  
especially designed to minimize on -state resistance,have a high  
rugged avalanche characteristics. This devices is specially well  
suited for high efficiency switch mode power supply , electronic  
lamp ballasts based on half bridge and UPS.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Value  
600  
2.0  
Units  
V
VDSS  
Drain Source Voltage  
Continuous Drain Current(@Tc=25)  
Continuous Drain Current(@Tc=100)  
Drain Current Pulsed  
A
ID  
1.3  
A
IDM  
VGS  
EAS  
(Note1)  
6.0  
A
Gate to Source Voltage  
±30  
120  
54  
V
Single Pulsed Avalanche Energy  
Repetitive Avalanche Energy  
Peak Diode Recovery dv /dt  
Total Power Dissipation(@Tc=25)  
Derating Factor above 25℃  
Junction and Storage Temperature  
Channel Temperature  
(Note2)  
(Note1)  
(Note3)  
mJ  
mJ  
V/ ns  
W
EAR  
dv/dt  
4.5  
46  
PD  
0.35  
-55~150  
300  
W/℃  
TJ,Tstg  
TL  
Thermal Characteristics  
Value  
Symbol  
Parameter  
Units  
Min  
Typ  
Max  
2.7  
RQJC  
RQCS  
RQJA  
Thermal Resistance , Junction -to -Case  
Thermal Resistance , Case-to-Sink  
-
0.5  
-
-
-
-
/W  
/W  
/W  
-
Thermal Resistance , Junction-to -Ambient  
62.5  
Rev.A Oct.2010  
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.