WFD2N60
Silicon N-Channel MOSFET
Features
■ 2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V
■
■
Ultra-low Gate Charge(Typical 15.3nC)
Fast Switching Capability
■
■
100%Avalanche Tested
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced
planar stripe,VDMOS technology.This latest technology has been
especially designed to minimize on -state resistance,have a high
rugged avalanche characteristics. This devices is specially well
suited for high efficiency switch mode power supply , electronic
lamp ballasts based on half bridge and UPS.
Absolute Maximum Ratings
Symbol
Parameter
Value
600
2.0
Units
V
VDSS
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
Drain Current Pulsed
A
ID
1.3
A
IDM
VGS
EAS
(Note1)
6.0
A
Gate to Source Voltage
±30
120
54
V
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
Derating Factor above 25℃
Junction and Storage Temperature
Channel Temperature
(Note2)
(Note1)
(Note3)
mJ
mJ
V/ ns
W
EAR
dv/dt
4.5
46
PD
0.35
-55~150
300
W/℃
℃
TJ,Tstg
TL
℃
Thermal Characteristics
Value
Symbol
Parameter
Units
Min
Typ
Max
2.7
RQJC
RQCS
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Case-to-Sink
-
0.5
-
-
-
-
℃
/W
℃
/W
℃
/W
-
Thermal Resistance , Junction-to -Ambient
62.5
Rev.A Oct.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
