WCD4C60S
Electrical Characteristics (TC=25℃ unless otherwise noted)
Value
Units
Symbol
Parameter
TestConditions
Min
Typ Max
-
-
-
-
5
1
μA
Repetitive Peak Off-State Current
VAK=VDRM RGK=1KΩ
IDRM
mA
ITM=8A, tp=380㎲
VTM
-
-
1.8
V
Peak On-State Voltage (1)
IGT
Gate Trigger Current (2)
Gate Trigger Voltage (2)
Non-Trigger Gate Voltage (1)
20
-
-
-
80
μA
V
VD=12V,RL=140
VGT
VGD
0.8
0.1
V
VD=12V,RL=3.3KΩ, RGK=1 KΩ
VD=67%VDRM, RGK=1 KΩ
V/㎲
dv/dt
IH
Critical Rate of Rise Off-State Voltage
15
-
-
-
-
-
5
-
IT=50mA, RGK=1 KΩ
IT=1mA, RGK=1 KΩ
mA
mA
Holding Current
Latching Current
Dynamic resistance
IL
6
Tj=125°C
Rd
-
-
100
mΩ
Note:
1. Pulse Width = 1.0 ms , Duty cycle ≤ 1%
2. RGK Current not Included in measurement
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
