WCD4C60S
Silicon Controlled Rectifiers
Features
◆
◆
◆
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 4 A )
Low On-State Voltage (1.6V(Typ.) @ ITM
)
General Description
Sensitive gate triggering SCR is suitable for the application where
requiring high bidirectional blocking voltage capability and also
suitable for over voltage protection ,motor control circuit in power
tool, inrush current limit circuit and heating control system.
Absolute Maximum Ratings (TJ= 25°C unless otherwise specified)
Symbol
Parameter
Repetitive Peak Off-State Voltage
Average On-State Current(180°
Conduction Angle)
Condition
Ratings
600
Units
VDRM
V
Ti =60 °C
1.35
0.9
IT(AV)
IT(RMS)
ITSM
A
A
A
Tamb=25 °C
Ti =60 °C
4
R.M.S On-State Current(180°
Conduction Angle)
Tamb=25 °C
1.35
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
t =10ms
Surge On-State Current
33
I2t
I2t for Fusing
4.5
50
A2s
A/㎲
W
di/dt
PGM
Critical rate of rise of on-state current
Forward Peak Gate Power Dissipation
Forward Average Gate Power
Dissipation
F=60Hz,Tj=125 °C
0.5
PG(AV)
Tj=125 °C
0.2
W
IFGM
TJ
Forward Peak Gate Current
Operating Junction Temperature
Storage Temperature
1.2A
A
-40~125 °C
-40~150 °C
°C
°C
TSTG
Thermal Characteristics
Symbol
Parameter
Value
15
Units
℃/W
RθJc
Thermal Resistance Junction to Case(DC)
Thermal Resistance Junction to Ambient(DC)
RθJA
100
℃/W
Jan 2009 .Rev .0
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