WBP13007-K
High Voltage Fast-Switching NPN Power Transistor
Features
■ Very High Switching Speed
■ High Voltage Capability
■ Wide Reverse Bias SOA
B
C
General Description
E
TO220
This device is designed for high voltage, High speed
switching characteristics required such as lighting
system ,switching mode power supply.
Absolute Maximum Ratings
Symbol
Parameter
Test Conditions
Value
Units
VCES
Collector-Emitter Voltage
700
V
VBE = 0
VCEO
Collector-Emitter Voltage
400
V
IB = 0
IC = 0
Emitter-Base Voltage
Collector Current
9.0
8.0
16
V
A
A
A
A
VEBO
IC
ICP
IB
Collector pulse Current
Base Current
4.0
8.0
80
Base Peak Current
tP = 5ms
IBM
Total Dissipation at Tc = 25℃
Total Dissipation at Ta = 25℃
Operation Junction Temperature
PC
W
2.05
TJ
- 40 ~ 150
- 40 ~ 150
℃
℃
Storage Temperature
TSTG
Tc:Case temperature (good cooling)
Ta:Ambient temperature (without heat sink)
Thermal Characteristics
Symbol
Parameter
Value
Units
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
1.56
62.5
℃/W
℃/W
RθJc
RθJA
Rev.A Feb.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
