WBN13003A1
Electrical Characteristics(Tc=25℃ unless otherwise noted)
Value
Units
Symbol
Parameter
Test Conditions
Min
Typ
Max
BVCBO
BVCEO
VCE(sat)
VBE(sat)
ICBO
Collector-Base Breakdown Voltage Ic=10mA,Ie=0
Collector-Base Breakdown Voltage Ic=10mA,Ib=0
Collector-Emitter Saturation Voltage Ic=500mA,Ib=100mA
600
V
V
400
-
-
-
-
-
-
-
-
-
-
-
-
0.8
1.2
5
V
Base-Emitter Saturation Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter- Base Cutoff Current
Ic=500mA,Ib=100mA
Vcb=600V,Ie=0mA
Vce=400V,Ib=0mA
Veb=9V,Ic=0mA
V
µA
µA
µA
ICEO
10
5
IEBO
Vce=20V,Ic=20mA
Vce=5V, Ic=1mA
10
9
-
-
40
-
hFE
DC Current Gain
ts
tf
Storage Time
Fall Time
Vcc=24V
Ic=5IB
IB1 =-IB2=0.05A
-
-
-
-
4
㎲
0.7
fT
Characteristic frequency
VCE=10V,IC=0.1A
4
-
-
MHz
Note:
Pulse Test : Pulse width 300,Duty cycle 2%
2/5
Steady, keep you advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
