WBN13003A1
High Voltage Fast-Switching NPN Power Transistor
Features
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Very High Switching Speed
High Voltage Capability
Wide Reverse Bias SOA
General Description
This Device is designed for high voltage , High speed
switching Characteristics required such as lighting
system,switching mode power supply.
Absolute Maximum Ratings
Symbol
VCES
VCEO
VEBO
IC
Parameter
Test Conditions
Value Units
Collector-Emitter Voltage
VBE=0
600
V
Collector-Emitter voltage
Emitter -Base voltage
Collector Current
IB=0
400
V
IC=0
9.0
V
1.2
A
ICP
Collector pulse Current
Base Current
2.4
A
IB
0.75
1.5
A
IBM
Base Peak Current
tP=5ms
A
PC
Total Dissipation at Tc=25℃
Operation Junction Temperature
Storage Temperature
18
W
℃
℃
TJ
-40~150
-40~150
TSTG
Thermal Characteristics
Symbol
Parameter
Value Units
RQJc
Thermal Resistance Junction to Case
6.9
℃/W
RQJA
Thermal Resistance Junction to Ambient
89
Rev.A Jun.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
