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WBN13003A1 参数 Datasheet PDF下载

WBN13003A1图片预览
型号: WBN13003A1
PDF下载: 下载PDF文件 查看货源
内容描述: 高压快速开关NPN功率晶体管 [High Voltage Fast-Switching NPN Power Transistor]
分类和应用: 晶体开关晶体管高压
文件页数/大小: 5 页 / 474 K
品牌: WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
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WBN13003A1  
High Voltage Fast-Switching NPN Power Transistor  
Features  
Very High Switching Speed  
High Voltage Capability  
Wide Reverse Bias SOA  
General Description  
This Device is designed for high voltage , High speed  
switching Characteristics required such as lighting  
system,switching mode power supply.  
Absolute Maximum Ratings  
Symbol  
VCES  
VCEO  
VEBO  
IC  
Parameter  
Test Conditions  
Value Units  
Collector-Emitter Voltage  
VBE=0  
600  
V
Collector-Emitter voltage  
Emitter -Base voltage  
Collector Current  
IB=0  
400  
V
IC=0  
9.0  
V
1.2  
A
ICP  
Collector pulse Current  
Base Current  
2.4  
A
IB  
0.75  
1.5  
A
IBM  
Base Peak Current  
tP=5ms  
A
PC  
Total Dissipation at Tc=25  
Operation Junction Temperature  
Storage Temperature  
18  
W
TJ  
-40~150  
-40~150  
TSTG  
Thermal Characteristics  
Symbol  
Parameter  
Value Units  
RQJc  
Thermal Resistance Junction to Case  
6.9  
℃/W  
RQJA  
Thermal Resistance Junction to Ambient  
89  
Rev.A Jun.2011  
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.