STN1A60S
Electrical Characteristics (TJ = 25°C unless otherwise specified)
Characteristics
Peak Forward or Reverse Blocking Current
(VD= VDRM/VRRM,gate open)
Symbol
Min
Typ. Max
Unit
μA
TJ=25℃
-
-
-
-
5
500
IDRM
TJ=125℃
Forward “On” Voltage
(ITM = 1.5 A)
(Note2)
VTM
-
1.2
1.5
V
-
-
-
-
-
-
-
-
0.4
1.3
3
3.8
-
-
-
-
5
5
5
T2+G+
T2+G-
T2-G-
T2-G+
T2+G+
T2+G-
T2-G-
T2-G+
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 33 Ω)
IGT
mA
7
1.2
1.2
1.2
1.5
Gate Trigger Voltage (Continuous dc)
(VD =12 Vdc, RL = 33 Ω)
VGT
V
VGD
dV/dt
IH
Gate threshold voltage(TJ=125℃, VD=VDRM,RL=3.3KΩ)
0.2
10
-
-
-
-
V
Critical rate of rise of commutation Voltage (VD=0.67VDRM,gate open)
Holding Current (VD =12 V, IGT = 100 mA)
20
1.3
V/μs
mA
5
T2+G+
T2+G-
T2-G-
T2-G+
-
-
-
-
1.2
4.0
1.0
2.5
5
8
5
8
latching current (VD = 12 V; IGT = 100 mA)
IL
mA
mΩ
Dynamic resistance
(TJ=125℃)
Rd
-
-
420
Note 2. Forward current applied for 1 ms maximum duration, duty cycle
2/5
Steady, keep you advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
