STN1A60S
Logic Level
Bi-Directional Triode Thyristor
Features
■ Repetitive Peak off-State Voltage: 600V
■ R.M.S On-State Current(IT(RMS)=1A
■ Low on-state voltage: VTM=1.2(typ.)@ ITM
■ Low reverse and forward blocking current:
IDRM=500uA@TC=125℃
■ Low holding current: IH=4mA (typ.)
■ High Commutation dV/dt.
General Description
General purpose switching and phase control applications.
These devices are intended to be interfaced directly to micro-
controllers, logic integrated circuits and other low power gate
trigger circuits such as fan speed and temperature modulation
control, lighting control and static switching relay.
Absolute Maximum Ratings (TJ=25℃ unless otherwise specified)
Symbol
Parameter
Value
Units
VDRM
Peak Repetitive Forward Blocking Voltage(gate open)
(Note 1)
600
V
T(RMS)
ITSM
I2t
Forward Current RMS (All Conduction Angles, TL=50℃)
Peak Forward Surge Current, (full Cycle, Sine Wave, 50/60 Hz)
Circuit Fusing Considerations (tp= 10 ms)
1
A
A
9.1/10
0.41
A2s
PGM
Peak Gate Power — Forward, (Tc = 58°C,Pulse with≤1.0us)
Average Gate Power — Forward, (Over any 20ms period)
5
W
W
PG(AV)
0.1
Critical rate of rise of on-state current
TJ=125℃
dI/dt
50
A/μs
ITM = 1.5A; IG = 200mA; dIG/dt = 200mA/µs
IFGM
VRGM
TJ,
Peak Gate Current — Forward, Tj = 125°C (20 µs, 120 PPS)
0.5
6
A
V
Peak Gate Voltage — Reverse, Tj = 125°C (20 µs, 120 PPS)
Junction Temperature
Storage Temperature
mass
-40~125
-40~150
2
℃
℃
g
Tstg
Note1: .Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC may
switch to the on-state. The rate of rise of current should not exceed 3A/us.
Thermal Characteristics
Value
Typ
Symbol
Parameter
Units
Min
Max
RQJC
RQJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
-
-
60
℃/W
℃/W
-
-
120
Rev. B Nov.2008
T01-3
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WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
