SFU1N60
Electrical Characteristics (Tc = 25°C)
Characteristics
Gate leakage current
Symbol
IGSS
Test Condition
VGS = ±30 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, Tc = 125°C
ID = 250 μA, VGS = 0 V
Min
Type
Max
±100
-
Unit
nA
V
-
±30
-
-
-
-
-
-
Gate−source breakdown voltage
V(BR)GSS
10
μA
μA
V
Drain cut−off current
IDSS
-
100
-
Drain−source breakdown voltage
V(BR)DSS
600
ΔBVDSS
/
Break Voltage Temperature
Coefficient
ID=250μA, Referenced to 25℃
-
0.5
-
V/℃
ΔTJ
Gate threshold voltage
Drain−source ON resistance
Forward Transconductance
Input capacitance
VGS(th)
RDS(ON)
gfs
VDS = 10 V, ID =250 μA
VGS = 10 V, ID =0.65A
VDS = 40 V, ID =0.65A
VDS = 25 V,
2
-
-
-
-
-
-
-
-
-
-
4
8.5
-
V
Ω
S
7.7
1.3
247
23
Ciss
Crss
Coss
tr
318
30
6.4
26
72
59
59
Reverse transfer capacitance
Output capacitance
VGS = 0 V,
pF
f = 1 MHz
4.9
11
Rise time
VDD =300 V,
ID = 1.3 A
RG=25 Ω
Turn−on time
Switching time
ton
33
ns
Fall time
tf
26
(Note4,5)
Turn−off time
Total gate charge (gate−source plus
gate−drain)
toff
26
VDD = 480 V,
VGS = 10 V,
ID = 1.3 A
Qg
-
9.1
12
nC
Gate−source charge
Qgs
Qgd
-
-
1.2
4.5
-
-
(Note4,5)
Gate−drain (“miller”) Charge
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Symbol
IDR
Test Condition
Min
Type
Max
1.3
5.0
1.4
-
Unit
A
-
-
-
-
-
-
-
-
IDRP
-
A
VDSF
trr
IDR = 1.3A, VGS = 0 V
IDR = 1.3A, VGS = 0 V,
dIDR / dt = 100 A / μs
-
V
Reverse recovery time
163
0.85
ns
μC
Reverse recovery charge
Qrr
-
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=92mH,IAS=1.3A,VDD=50V,RG=0Ω,Starting TJ=25℃
3.ISD≤1.3A,di/dt≤200A/us, VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
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