SFU1N60
Silicon N-Channel MOSFET
Features
■1.3A,600V, RDS(on)(Max 8.5Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 9.1nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced
planar stripe, VDMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
suited for high efficiency switch mode power supply. electronic
Lamp ballasts based on half bridge and UPS.
G
D
S
TO251
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
V
Drain Source Voltage
600
1.3
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
Drain Current Pulsed
A
ID
0.84
5.0
A
IDM
VGS
EAS
(Note1)
A
Gate to Source Voltage
±30
78
V
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
(Note 2)
(Note 1)
(Note 3)
mJ
mJ
V/ns
W
EAR
dv/dt
3.9
Peak Diode Recovery dv/dt
5.5
Total Power Dissipation(@Tc=25℃)
Derating Factor above 25℃
32
PD
0.24
-55~150
300
W/℃
℃
TJ, Tstg
TL
Junction and Storage Temperature
Maximum lead Temperature for soldering purposes
℃
Thermal Characteristics
Value
Typ
Symbol
Parameter
Units
Min
-
Max
RQJC
RQCS
RQJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
-
-
-
3.9
℃/W
℃/W
℃/W
0.5
-
-
Thermal Resistance, Junction-to-Ambient
110
Rev. C Nov.2008
P01-3
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WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
