SFF2N60
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
IGSS
Test Condition
VGS=±30V,VDS=0V
IG=±10 µA,VDS=0V
Min Type Max Unite
Gate leakage current
-
-
-
±100
nA
V
Gate-source breakdown voltage
Drain cut-off current
V(BR)GSS
±30
-
VDS=600V,VGS=0V
VDS=480V,TC=125℃
ID=250 µA,VGS=0V
-
-
-
-
-
10
100
-
µA
µA
V
IDSS
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward trans conductance
Input capacitance
V(BR)DSS
VGS(th)
RDS(ON)
gfs
600
VDS=10V,ID=250 µA
VGS=10V,ID=0.8A
VDS=50V,ID=0.8A
2
-
-
-
-
-
-
-
4
4.7
-
V
Ω
S
3.8
2.0
270
40
5
Ciss
350
50
7
VDS=25V,
VGS=0V,
f=1MHz
Reverse transfer capacitance
Output capacitance
Crss
pF
ns
Coss
VDD=300V,
ID=2.4A
Rise time
tr
10
30
Turn-on time
Fall time
ton
tf
-
-
-
25
20
25
60
50
60
Switching time
RG=25Ω
Turn-off time
toff
(Note4,5)
Total gate charge(gate-source
plus gate-drain)
Qg
-
9.0
11
VDD=320V,
VGS=10V,
ID=6.5A
nC
Gate-source charge
Qgs
Qgd
-
-
1.6
4.3
-
-
(Note4,5)
Gate-drain("miller")Charge
Source-Drain Ratings and Characteristics（Ta=25℃)
Characteristics
Continuous drain reverse current
Pulse drain reverse current
Forward voltage(diode)
Symbol
IDR
Test Condition
Min
Type Max Unit
-
-
-
-
-
-
-
2
9.5
1.4
-
A
IDRP
-
-
A
VDSF
trr
IDR=2A,VGS=0V
IDR=2A,VGS=0V,
dIDR/dt=100A / µs
-
V
Reverse recovery time
180
0.72
ns
µC
Reverse recovery charge
Qtrr
-
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=18.5mH,IAS=2A,VDD=50V,RG=0Ω,Starting TJ=25℃
3. ISD≤2A,di/dt≤200A/us, VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, all for your advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
