SFF2N60
Silicon N-Channel MOSFET
Features
■2A,600V, RDS(on)(Max 4.7Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 9.0nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance , have a high
rugged avalanche characteristics. This devices is specially well
suited for high efficiency switch mode power supply.
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
600
Units
V
Drain Source Voltage
ID
Continuous Drain Current(@TC=25℃)
Continuous Drain Current(@TC=100℃)
Drain Current Pulsed
2.0*
1.5*
9.5*
±30
A
A
IDM
(Note1)
A
VGS
EAS
EAR
dv/dt
PD
Gate to Source Voltage
V
SinglePulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC=25℃)
Derating Factor above25℃
(Note2)
(Note1)
(Note3)
140
mJ
mJ
V/ns
W
2.8
4.5
23
0.18
-55~150
300
W/℃
℃
TJ,Tstg
TL
Junction and Storage Temperature
Channel Temperature
℃
*Drain current limited by junction temperature
Thermal Characteristics
Value
Typ
Symbol
Parameter
Units
Min
Max
5.5
RQJC
RQJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
-
-
-
-
℃/W
℃/W
62.5
Rev.A Aug.2010
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