SBW13009-O
Electrical Characteristics
Value
Units
Symbol
Parameter
Test conditions
Min Typ Max
VCEO(sus)
Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0
400
-
-
V
Ic=5.0A,Ib=1.0A
Ic=8.0A,Ib=1.6A
Ic=12A,Ib=3.0A
Ic=8.0A,Ib=1.6A
Tc=100℃
1.0
1.5
3.0
-
-
V
VCE(sat)
Collector-Emitter Saturation Voltage
-
-
-
-
-
-
2.0
V
V
Ic=5.0A,Ib=1.0A
Ic=8.0A,Ib=1.6A
Ic=8.0A,Ib=1.6A
Tc=100℃
1.2
1.6
VBE(sat)
Base-Emitter Saturation Voltage
1.5
V
IEBO
Emitter -Base Cutoff Current
DC Current Gain
Veb=9V,Ic=0V
Vce=5V,Ic=5.0A
Vce=5V,Ic=8.0A
VCC=5.0V,Ic=0.5A
(UI9600)
-
10
6
-
-
-
-
-
10
40
30
10
0.8
uA
hFE
ts
tf
Storage Time
4
µs
Fall Time
fT
Current Gain Band width Product
Vce=10V,Ic=0.5A
4
MHz
Note :
Pulse Test :Pulse width 300,Duty cycle 2%
2/5
Steady, keep you advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
