SBW13009-O
High voltage Fast Switching NPN Power Transistor
Features
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Very High Switching Speed
High voltage Capability
Wide Reverse Bias SOA
General Description
This Device is designed for high voltage, High speed
switching characteristics required such as lighting
system,switching mode power supply.
Absolute Maximum Ratings
Symbol
Parameter
Test Conditions
Value
700
Units
VCES
Collector -Emitter Voltage
VBE=0
V
V
VCEO
VEBO
IC
Collector -Emitter Voltage
Emitter -Base Voltage
Collector Current
IB=0
IC=0
400
9.0
V
12
A
ICP
Collector pulse Current
Base Current
25
A
IB
6.0
A
IBM
PC
Base Peak Current
tP=5ms
12
A
Total Dissipation at Tc=25℃
Operation Junction Temperature
Storage Temperature
110
W
℃
℃
TJ
-40~150
-40~150
TSTG
Thermal Characteristics
Symbol
Parameter
Value
1.13
Units
℃/W
℃/W
RӨJC
RӨJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
62.5
Rev.A Aug.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
