SBP1710-R
Electrical Characteristics (TC=25℃ unless otherwise noted)
Value
Typ Max
Symbol
ICBO
Parameter
Test conditions
Units
Min
-
VCB=500V, Ie=0A
Collector Cut-off Current
-
-
-
-
-
-
-
-
-
-
-
10
10
-
µA
µA
V
VEB=5V, Ic=0A
Ic=1mA,Ie=0
Emitter Cut-off Current
IEBO
-
BVCBO
BVCEO
BVEBO
VCE(sat)
VBE(sat)
IEBO
Collector-Base Breakdown Voltage
900
Collector-Emitter Breakdown Voltage Ic=5mA,Ib=open
Emitter-Base Breakdown Voltage Ie=1mA,Ic=0
Collector -Emitter Saturation Voltage Ic=3A,Ib=0.6A
500
-
V
7
-
-
V
1
V
Base -Emitter saturation Voltage
Emitter -Base Cutoff Current
Ic=3A,Ib=0.6A
Veb=5V,Ic=0
-
1.5
10
50
-
V
-
µA
Vce=5V,Ic=0.6A
Vce=5V,Ic=3A
20
8
-
hFE
fT
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Vce=10V,Ic=0.6A
VCB=10V, f=1MHz
18
MHz
Cob
ton
ts
-
-
-
-
80
pF
Turn on Time
Storage Time
Fall Time
VCC=5V,IC=0.5A
VCC=5V,IC=0.5A
VCC=5V,IC=0.5A
0.6
µs
3
-
-
-
8
µs
µs
tf
0.4
Note:
Pulse Test: Pulse width≤300µs,Duty cycle 10%
2/6
Steady, all for your advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
