SBP1710-R
High Voltage Fast-Switching NPN Power Transistor
Features
■
■
■
Very high switching speed
High Voltage Capability
Wide Reverse Bias SOA
General Description
This Device is designed for high voltage, High speed
switching characteristics required such as lighting
system, switching mode power supply.
Absolute Maximum Ratings
Symbol
Parameter
Test Conditions
Value
Units
VCBO
Collect-Emitter Voltage
VBE=0
IB=0
900
500
7
V
V
VCEO
VEBO
IC
Collector-Emitter Voltage
Emitter-Base Voltage
IC=0
V
Collector Current
7
A
ICP
Collector pulse Current
Total Dissipation at Tc=25℃
Operation Junction Temperature
Storage Temperature
(Note)
14
A
PC
45
W
℃
℃
TJ
150
-55~150
TSTG
Rev.A01 Jun.2011
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
T111-3
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
