SBP13003-O1
Electrical Characteristics (TC=25℃ unless otherwise noted)
Value
Min Typ
Symbol
Units
Parameter
Test Conditions
Max
VCEO(sus) Collector-Emitter Breakdown Voltage
Ic=10mA,Ib=0
400
-
-
V
Ic=0.5A,Ib=0.1A
Ic=1.0A,Ib=0.25A
Ic=1.5A,Ib=0.5A
Tc=100℃
0.5
1.0
3.0
VCE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
-
-
V
1.0
1.2
Ic=0.5A,Ib=0.1A
Ic=1.0A,Ib=0.25A
Tc=100℃
VBE(sat)
-
-
-
-
V
Vcb=700V
Collector-Base Cutoff Current
(Vbe=-1.5V)
1.0
5.0
ICBO
mA
Vcb=700V,
Tc=100℃
10
5
-
-
40
40
Vce=2V,Ic=0.5A
Vce=2V, Ic=1.0A
hFE
DC Current Gain
ts
tf
Storage Time
Fall Time
-
-
1.2
4.0
0.3
V
CC=5V
㎲
0.12
Ic=0.5A
Note:
Pulse Test : Pulse width 300, Duty cycle 2%
2/5
.
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
