SBP13003-O1
High Voltage Fast-Switching NPN Power Transistor
Features
◆ Very High Switching Speed
◆ High Voltage Capability
◆ Wide Reverse Bias SOA
General Description
This Device is designed for high voltage, High speed
switching characteristics required such as lighting system,
switching mode power supply.
Absolute Maximum Ratings
Symbol
Parameter
Test Conditions
VBE = 0
Value
Units
VCES
Collector-Emitter Voltage
700
V
VCEO
Collector-Emitter Voltage
400
V
IB = 0
IC = 0
VEBO
IC
ICP
IB
Emitter-Base Voltage
Collector Current
9.0
1.5
3.0
0.75
1.5
35
V
A
A
A
A
Collector pulse Current
Base Current
IBM
Base Peak Current
tP = 5ms
Total Dissipation at Tc*= 25℃
Total Dissipation at Ta* = 25℃
PC
W
1.2
TJ
Operation Junction Temperature
Storage Temperature
- 40 ~ 150
- 40 ~ 150
℃
℃
TSTG
Tc: Case temperature (good cooling)
Ta: Ambient temperature (without heat sink)
Thermal Characteristics
Symbol
Parameter
Value
Units
RθJc
RθJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
1.56
℃/W
62.5
℃/W
Jan 2009. Rev. 0
1/5
Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved.
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
