MCR100-8H
Electrical Characteristics(TJ = 25°C, RGK = 1 kΩ unless otherwise specified)
Characteristics
Symbol
IDRM/IRRM
Min
-
Typ.
-
Max
Unit
μA
Tc=25℃
1
off-state leakage current
(VAK= VDRM/VRRM
)
Tc=125℃
100
Forward “On” voltage (ITM = 1.2A tp = 380μs)
(Note2.1)
VTM
-
15
-
1.4
-
1.8
200
0.8
V
Gate trigger current (continuous dc)
(VAK = 7 Vdc, RL = 100 Ω)
(Note2.2)
IGT
μA
Gate Trigger Voltage (Continuous dc)
(VAK = 7 Vdc, RL = 100 Ω)
(Note2.2)
VGT
VGD
-
-
V
V
Gate threshold Voltage
(Note2.1)
0.2
-
-
TJ=125℃
Gate open circuit
500
800
25
Voltage Rate of Rise Off-State Voltage
(VD=0.67VDRM ;exponential waveform)
dv/dt
V/μs
Holding Current (VD = 12 V; IGT = 0.5 mA)
latching current (VD = 12 V; IGT = 0.5 mA)
IH
IL
-
-
2
2
5
6
mA
mA
Note 2.1 Pulse width≤1.0ms,duty cycle≤1%
2.2 RGK current is not included in measurement.
2/5
Steady, keep you advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
