MCR100-8H
Sensitive Gate
Silicon Controlled Rectifiers
Features
■ High repetitive peak off-state voltage VDRM/VRRM=800V
■ Sensitive gate trigger current: IGT=200uA max.
■ Low on-state voltage: VTM=1.4(typ.)@ ITM
■ Low reverse and forward blocking current:
IDRM/IPRM=100uA@TC=125℃
■ Low holding current: IH=5mA maximum
General Description
Sensitive triggering SCR is suitable for the application
where gate current limited such as microcontrollers, logic
integrated circuits, small motor control, gate driver for large
SCR, sensing and detecting circuits.
K
G
General purpose switching and phase control applications
A
TO-92
Absolute Maximum Ratings (Tj=25℃ unless otherwise specified)
Symbol
Parameter
Value
Units
VDRM/VRRM
IT(RMS)
Repetitive peak off-state voltage
Note(1)
TI=85℃
800
V
A
A
RMS on-state current (180o conduction angles)
Average on-state current (80o conduction angles )
0.8
IT(AV)
TI=85℃
0.5
tp = 8.3 ms
tp = 10 ms
tp = 8.3 ms
9
8
ITSM
Non repetitive surge peak on-state current
A
I2t
I²t Value for fusing
0.43
0.1
A2s
W
W
A
PGM
PG(AV)
IFGM
VRGM
TJ,
Peak gate power
Average gate power dissipation
Peak gate current
TJ=25℃
TA=25℃
TA=25℃
0.01
1
Peak gate voltage
5
V
Junction temperature
Storage temperature
-40~125
-40~150
℃
℃
Tstg
Note1: Although not recommended, off-state voltages up to 900 V may be applied without damage, but the thyristor may
switch to the on-state.The rate of rise of current should not exceed 15 A/µs.
Thermal Characteristics
Value
Typ
Symbol
Parameter
Units
/W
Min
-
Max
75
RQJC
RQJA
Thermal resistance, Junction-to-Case
Thermal resistance, Junction-to-Ambient
-
℃
-
-
200
℃/W
Rev. A1.1 Jun.2011
T12-2
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